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Creators/Authors contains: "Li, Owen"

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  1. ; ; ; (, IEEE transactions on electron devices)
    Liu, M. (Ed.)
    This work presents the design and experimental demonstration of a novel dual-storage-portnonvolatile SRAM based on back-end-of-the-line processed Hf0.5Zr0.5O2-based metal-ferroelectric-metalcapacitors, which offers significant advantages over the conventional single-storage-port version withoutarea penalty, and paves the way for implementing our proposed selector-free 3D cross-point memory. 
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